IEEE - Institute of Electrical and Electronics Engineers, Inc. - Improved Electrical Characteristics and Retention Time of DRAMs Using HSG-merged-AHO Cylinder Capacitor

2005 International Semiconductor Device Research Symposium

Author(s): S.G. Kim ; C.S. Hyun ; D. Park ; S.J. Kim ; T.H. Cho ; H.J. Kang ; S.H. Lee ; J.G. Suk ; B.K. Lim ; Y.S. Jeon ; K.H. Hwang ; H.S. Hong ; S.G. Jeon ; K.Y. Lee ; K.S. Oh ; D.G. Park
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Bethesda, MD, USA
Conference Date: 7 December 2005
Page Count: 2
Page(s): 113 - 114
ISBN (Paper): 1-4244-0083-X
DOI: 10.1109/ISDRS.2005.1596004
Regular:

Fully integrated 512Mb DRAMs using HSG-merged-AHO cylinder capacitor were successfully developed for the first time. Improved electrical characteristics and retention time of HSG-merged-AHO... View More

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