IEEE - Institute of Electrical and Electronics Engineers, Inc. - Three region Hetero-Material Gate Oxide Stack (TMGOS) Epi-MOSFET: A new device structure for reduced short channel effects

2005 International Semiconductor Device Research Symposium

Author(s): K. Goel ; M. Saxena ; M. Gupta ; R.S. Gupta
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Bethesda, MD, USA
Conference Date: 7 December 2005
Page Count: 2
Page(s): 72 - 73
ISBN (Paper): 1-4244-0083-X
DOI: 10.1109/ISDRS.2005.1595983
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