IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electrical and structural characterization of GaN nanowire based devices

2005 International Semiconductor Device Research Symposium

Author(s): G. Koley
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Bethesda, MD, USA
Conference Date: 7 December 2005
Page Count: 2
Page(s): 26 - 27
ISBN (Paper): 1-4244-0083-X
DOI: 10.1109/ISDRS.2005.1595959
Regular:

III-nitride based semiconductors have been under intense research focus in recent years largely due to their electronic and optoelectronic applications. In comparison to large area devices,... View More

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