IEEE - Institute of Electrical and Electronics Engineers, Inc. - Analysis of backscattering phenomenon from drain region in a silicon nanodiode

Digest of Papers Microprocesses and Nanotechnology 2005. 2005 International Microprocesses and Nanotechnology Conference

Author(s): T. Tsutsumi ; K. Tomizawa
Sponsor(s): Japan Soc. of Appl. Phys
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Tokyo, Japan, Japan
Conference Date: 25 October 2005
Page(s): 262 - 263
ISBN (Paper): 4-9902472-2-1
DOI: 10.1109/IMNC.2005.203838
Regular:

In this paper, the backscattering phenomenon from drain region in a silicon nanodiode was analyzed. A Monte Carlo simulation is employed for analyzing the backscattering effect in a short channel... View More

Advertisement