IEEE - Institute of Electrical and Electronics Engineers, Inc. - New electron beam proximity effects correction (EBPC) approach for 45nm and 32nm nodes

Digest of Papers Microprocesses and Nanotechnology 2005. 2005 International Microprocesses and Nanotechnology Conference

Author(s): S. Manakli ; K. Docherty ; L. Pain ; J. Todeschini ; M. Jurdit ; B. Icard ; S. Leseuil ; B. Minghetti
Sponsor(s): Japan Soc. of Appl. Phys
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Tokyo, Japan, Japan
Conference Date: 25 October 2005
ISBN (Paper): 4-9902472-2-1
DOI: 10.1109/IMNC.2005.203828
Regular:

Summary form only given. After the last successful results obtained these last years, EBDW (E-beam direct write) use for ASIC manufacturing is now demonstrated. However, throughput and resolution... View More

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