IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low pressure CVD growth of single-wall carbon nanotubes

Digest of Papers Microprocesses and Nanotechnology 2005. 2005 International Microprocesses and Nanotechnology Conference

Author(s): T. Shiokawa ; B.P. Zhang ; M. Suzuki ; T. Kobayashi ; K. Ishibashi
Sponsor(s): Japan Soc. of Appl. Phys
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Tokyo, Japan, Japan
Conference Date: 25 October 2005
Page(s): 92 - 93
ISBN (Paper): 4-9902472-2-1
DOI: 10.1109/IMNC.2005.203753
Regular:

The growth method of carbon nanotube (CNT) using catalytic chemical vapor deposition (CCVD) has been widely used for CNT based device applications because it has advantages in terms of the facts... View More

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