IEEE - Institute of Electrical and Electronics Engineers, Inc. - 3D rigorous simulation of EUV defective masks using modal method by Fourier expansion

Digest of Papers Microprocesses and Nanotechnology 2005. 2005 International Microprocesses and Nanotechnology Conference

Author(s): R. Smaali ; M. Besacier ; G. Granet ; P. Schiavone
Sponsor(s): Japan Soc. of Appl. Phys
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Tokyo, Japan, Japan
Conference Date: 25 October 2005
Page(s): 86 - 87
ISBN (Paper): 4-9902472-2-1
DOI: 10.1109/IMNC.2005.203750
Regular:

Simulation is recognized to play a significant role in the optimization of the lithography process. This is especially true for emerging technologies such as EUV. Indeed, the availability of EUV... View More

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