IEEE - Institute of Electrical and Electronics Engineers, Inc. - Phase defect observation using an EUV microscope

Digest of Papers Microprocesses and Nanotechnology 2005. 2005 International Microprocesses and Nanotechnology Conference

Author(s): K. Hamamoto ; Y. Tanaka ; N. Hosokawa ; N. Sakaya ; M. Hosoya ; T. Shoki ; T. Watanabe ; H. Kinoshita
Sponsor(s): Japan Soc. of Appl. Phys
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Tokyo, Japan, Japan
Conference Date: 25 October 2005
Page(s): 82 - 83
ISBN (Paper): 4-9902472-2-1
DOI: 10.1109/IMNC.2005.203748
Regular:

Extreme ultraviolet lithography (EUVL) is being introduced as next generation lithography of 32 nm node. Defect-free mask fabrication is one of the critical issues to lead EUVL. There are two... View More

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