IEEE - Institute of Electrical and Electronics Engineers, Inc. - Characterization of 45 nm att-PSM lithography with a hyper-NA ArF tool

Digest of Papers Microprocesses and Nanotechnology 2005. 2005 International Microprocesses and Nanotechnology Conference

Author(s): T. Sato ; A. Endo ; A. Mimotogi ; S. Mimotogi ; K. Sato ; S. Tanaka
Sponsor(s): Japan Soc. of Appl. Phys
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Tokyo, Japan, Japan
Conference Date: 25 October 2005
ISBN (Paper): 4-9902472-2-1
DOI: 10.1109/IMNC.2005.203713
Regular:

In the 45 nm half pitch node, a mask induced polarization effect is appeared. Also, this effect depends on optical diffraction orders. This is notable in an attenuated phase shift mask (att-PSM)... View More

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