IEEE - Institute of Electrical and Electronics Engineers, Inc. - Oxidation induced stress effects on hole mobility as a function of transistor geometry in a 0.15 /spl mu/m dual gate oxide CMOS SOI process

2005 IEEE International SOI Conference

Author(s): P.S. Fechnerand ; E.E. Vogt
Sponsor(s): IEEE Electron. Dev. Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Honolulu, HI, USA
Conference Date: 3 October 2005
Page(s): 163 - 165
ISBN (Paper): 0-7803-9212-4
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2005.1563575
Regular:

Additional process complexity required for multiple gate oxide thicknesses has been demonstrated to cause significant impact on p-channel mobility through oxidation induced stress effects. This... View More

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