IEEE - Institute of Electrical and Electronics Engineers, Inc. - Scaling of GeOI NFET in sub-50nm regime using a Monte-Carlo method

2005 IEEE International SOI Conference

Author(s): S. Barraud ; L. Clavelier
Sponsor(s): IEEE Electron. Dev. Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Honolulu, HI, USA
Conference Date: 3 October 2005
Page(s): 108 - 109
ISBN (Paper): 0-7803-9212-4
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2005.1563554
Regular:

Electrical properties in germanium and performances of GeOI devices have been studied using MC simulations. We have shown an ion improvement increasing when the channel length is shrinked that is... View More

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