IEEE - Institute of Electrical and Electronics Engineers, Inc. - Lateral and vertical coupling effects in MIGFETs

2005 IEEE International SOI Conference

Author(s): S. Eminente ; Kyoung-Il Na ; S. Cristoloveanu ; L. Mathew ; A. Vandooren
Sponsor(s): IEEE Electron. Dev. Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Honolulu, HI, USA
Conference Date: 3 October 2005
Page(s): 94 - 95
ISBN (Paper): 0-7803-9212-4
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2005.1563548
Regular:

We have performed measurements on double-gate Fin-FETs with independent gate contacts in order to study the coupling effects. In these devices, it is possible to separate the coupling between the... View More

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