IEEE - Institute of Electrical and Electronics Engineers, Inc. - Transport and leakage in super-critical thickness strained silicon directly on insulator MOSFETs with strained Si thickness up to 135 nm

2005 IEEE International SOI Conference

Author(s): I. Aberg ; Z. Cheng ; T.A. Langdo ; I. Lauer ; A. Lochtefeld ; D.A. Antoniadis ; J.L. Hoyt
Sponsor(s): IEEE Electron. Dev. Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Honolulu, HI, USA
Conference Date: 3 October 2005
Page(s): 24 - 26
ISBN (Paper): 0-7803-9212-4
ISSN (Paper): 1078-621X
DOI: 10.1109/SOI.2005.1563521
Regular:

In this work, we study both FD- and PD-SSOI with aggressive T/sub Si/ of up to 135 nm for 14% SSOI (14% Ge equivalent strain). We have demonstrated that mobility in 14% SSOI is independent of the... View More

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