IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ohmic contacts to n-type GaAs made with Pd/Sn and Pd/Sn/Au metallizations

Proceedings of 8th Mediterranean Electrotechnical Conference on Industrial Applications in Power Systems, Computer Science and Telecommunications (MELECON 96)

Author(s): Islam, M.S. ; McNally, P.J. ; Cameron, D.C.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1996
Conference Location: Bari, Italy, Italy
Conference Date: 16 May 1996
Volume: 1
ISBN (Paper): 0-7803-3109-5
DOI: 10.1109/MELCON.1996.551562
Regular:

A non-alloyed ohmic contact system comprising of Pd/Sn metallization has been developed for n-GaAs and compared with Pd/Sn/Au metallization. Contacts are annealed at 300-400/spl deg/C for 30 min... View More

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