IEEE - Institute of Electrical and Electronics Engineers, Inc. - Highest cryogenic transconductance of 2.2 S/mm for 400-nm-gate InGaAs/InAlAs PHEMT fabricated on [411]A-oriented InP substrate

2005 International Conference on Indium Phosphate And Related Materials

Author(s): I. Watanabe ; K. Shinohara ; T. Kitada ; S. Shimomura ; A. Endoh ; T. Mimura ; T. Matsui ; S. Hiyamizu
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2005
Conference Location: Glasgow, Scotland, UK
Conference Date: 8 May 2005
Page Count: 4
Page(s): 196 - 199
ISBN (Paper): 0-7803-8891-7
ISSN (Paper): 1092-8669
DOI: 10.1109/ICIPRM.2005.1517455
Regular:

We fabricated an In/sub 0.75/Ga/sub 0.25/As/In/sub 0.52/Al/sub 0.48/As pseudomorphic high electron mobility transistor (PHEMT) with a gate length (L/sub g/) of 400 nm on a [411]A-oriented InP... View More

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