IEEE - Institute of Electrical and Electronics Engineers, Inc. - High responsitivity intrinsic photoconductors based on Al/sub x/Ga/sub 1-x/N

1996 54th Annual Device Research Conference Digest

Author(s): B.W. Lim ; Q.C. Chen ; M.A. Khan ; C.J. Sun ; J.Y. Yang
Sponsor(s): IEEE Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1996
Conference Location: Santa Barbara, CA, USA, USA
Conference Date: 26 June 1996
Page Count: 2
Page(s): 192 - 193
ISBN (Paper): 0-7803-3358-6
DOI: 10.1109/DRC.1996.546432
Regular:

Recently several AlGaN-InGaN devices such as blue lasers, blue-green LEDs and high frequency transistors have been reported. In past we have demonstrated GaN based intrinsic photoconductors,... View More

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