IEEE - Institute of Electrical and Electronics Engineers, Inc. - MOCVD-grown GaAs-based resonant tunneling diodes with peak current densities in excess of 300 kA/cm/sup 2/

1996 54th Annual Device Research Conference Digest

Author(s): A.R. Mirabedini ; L.J. Mawst ; D. Botez ; R.A. Marsland
Sponsor(s): IEEE Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 1996
Conference Location: Santa Barbara, CA, USA, USA
Conference Date: 26 June 1996
Page Count: 2
Page(s): 172 - 173
ISBN (Paper): 0-7803-3358-6
DOI: 10.1109/DRC.1996.546424
Regular:

By taking advantage of resonant tunneling through the second energy level of a deep quantum well in a strained-layer structure, we have achieved more than 2 times higher peak current densities... View More

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