IEEE - Institute of Electrical and Electronics Engineers, Inc. - Structural and electrical characterizations of long pulse XeCl excimer laser annealed Al/sup +/ ion implanted 4H-SiC

2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003)

Author(s): C. Dutto ; E. Fogarassy ; D. Mathiot ; D. Muller ; P. Kern ; S. Joulie ; J. Werckmann
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Munich, Germany, Germany
Conference Date: 22 June 2003
Page Count: 1
ISBN (Paper): 0-7803-7734-6
DOI: 10.1109/CLEOE.2003.1313614
Regular:

In this paper, we demonstrate the possibility to anneal the Al/sup +/ ion-implantation induced damage into 4H-SiC by laser processing using a new XeCl excimer source of 200 ns pulse duration (/spl... View More

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