IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ultrafast 1.55 /spl mu/m sensitive photoconductor obtained by ion-irradiated InGaAs layer

2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003)

Author(s): L. Joulaud ; J. Mangeney ; J.M. Lourtioz ; P. Crozat
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Munich, Germany, Germany
Conference Date: 22 June 2003
Page Count: 1
ISBN (Paper): 0-7803-7734-6
DOI: 10.1109/CLEOE.2003.1313594
Regular:

Ion-irradiated InGaAs lattice-matched to InP has been explored in this work and used as the active layer of new photoconductors. Photoconductors with an ion-irradiated InGaAs layer of 0.3 /spl... View More

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