IEEE - Institute of Electrical and Electronics Engineers, Inc. - Hydrogenated silicon carbon films prepared by hot wire chemical vapor deposition using monomethylsilane

3rd World Conference on Photovoltaic Energy Conversion

Author(s): S. Miyajima ; A. Yamada ; M. Konagai
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Osaka, Japan
Conference Date: 11 May 2003
Volume: 2
Page Count: 4
ISBN (Paper): 4-9901816-0-3
Regular:

Hydrogenated microcrystalline silicon carbon (/spl mu/c-Si/sub 1-x/C/sub x/:H) films were deposited by hot wire chemical vapor deposition (HWCVD) using a gas mixture of silane, hydrogen and... View More

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