IEEE - Institute of Electrical and Electronics Engineers, Inc. - Productions of Si and Ge thin film single crystalline growth by lateral grapho-epitaxy

3rd World Conference on Photovoltaic Energy Conversion

Author(s): T. Kawabe ; K. Yokoyama ; T. Koide ; T. Ito ; T. Minemoto ; H. Takakura ; Y. Hamakawa
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Osaka, Japan
Conference Date: 11 May 2003
Volume: 2
Page Count: 3
ISBN (Paper): 4-9901816-0-3
Regular:

A series of systematic investigation on the graphoepitaxial growth of germanium has been carried out by a focused traveling IR line zone heating apparatus assisted with a substrate heater system.... View More

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