IEEE - Institute of Electrical and Electronics Engineers, Inc. - Low-temperature epitaxial Si absorber layers grown by electron-cyclotron resonance chemical vapor deposition

3rd World Conference on Photovoltaic Energy Conversion

Author(s): B. Rau ; B. Selle ; U. Knipper ; S. Brehme ; I. Siber ; M. Stoger ; P. Schattschneider ; S. Gall ; W. Fuhs
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Osaka, Japan
Conference Date: 11 May 2003
Volume: 2
Page Count: 4
ISBN (Paper): 4-9901816-0-3
Regular:

We studied the homo-epitaxial growth of Si layers on crystalline Si(100) substrates in the temperature range from 420/spl deg/C to 510/spl deg/C using electron-cyclotron resonance chemical vapour... View More

Advertisement