IEEE - Institute of Electrical and Electronics Engineers, Inc. - The influence of surface preparation on rear surface passivation of mc-Si by thermally treated direct PECVD silicon nitride

3rd World Conference on Photovoltaic Energy Conversion

Author(s): H.F.W. Dekkers ; F. Duerinckx ; S. De Wolf ; G. Agostinelli ; J. Szlufcik
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Osaka, Japan
Conference Date: 11 May 2003
Volume: 2
Page Count: 4
ISBN (Paper): 4-9901816-0-3
Regular:

Bulk and surface passivating properties of low frequency direct PECVD SiN/sub x/:H were investigated on 0.5-1 /spl Omega/cm p-type mc-Si material. It is observed that bulk passivation is preserved... View More

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