IEEE - Institute of Electrical and Electronics Engineers, Inc. - A new isolation method for single crystal silicon MEMS and its application to z-axis microgyroscope

IEEE International Electron Devices Meeting 2003

Author(s): Sangjun Park ; Jongpal Kim ; Donghun Kwak ; Hyoungho Ko ; W. Carr ; J. Buss ; Dong-il Cho
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 2003
Page Count: 4
ISBN (Paper): 0-7803-7872-5
DOI: 10.1109/IEDM.2003.1269440
Regular:

This paper presents a new method for electrically isolating the released high-aspect ratio single crystal silicon MEMS structures. In this method, horizontal dielectric layers are implanted at... View More

Advertisement