IEEE - Institute of Electrical and Electronics Engineers, Inc. - A high density, low on-resistance 700V class trench offset drain LDMOSFET (TOD-LDMOS)

IEEE International Electron Devices Meeting 2003

Author(s): H. Teranishi ; A. Kitamura ; Y. Watanabe ; M. Ogino ; Y. Sugahara ; S. Kajiwara ; K. Mochizuki ; S. Wakimoto ; M. Iwaya ; N. Fujishima
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 2003
Page Count: 4
ISBN (Paper): 0-7803-7872-5
DOI: 10.1109/IEDM.2003.1269391
Regular:

We present a low on-resistance 700 V class trench offset drain LDMOSFET. A Noffset drain region is formed around the oxide-filled trench whose width and depth are both 20 /spl mu/m. The fabricated... View More

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