IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electrical degradation mechanisms of RF power GaAs PHEMTs

IEEE International Electron Devices Meeting 2003

Author(s): A.A. Villanueva ; J.A. del Alamos ; T. Hisaka ; K. Hayashi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 2003
Page Count: 4
ISBN (Paper): 0-7803-7872-5
DOI: 10.1109/IEDM.2003.1269382
Regular:

In this research, we have carried out a systematic investigation of the electrical degradation of RF power PHEMTs. By examining devices with different geometries as well as a variety of test... View More

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