IEEE - Institute of Electrical and Electronics Engineers, Inc. - 600V AlGaN/GaN power-HEMT: design, fabrication and demonstration on high voltage DC-DC converter

IEEE International Electron Devices Meeting 2003

Author(s): W. Saito ; Y. Takada ; M. Kuraguchi ; K. Tsuda ; I. Omura ; T. Ogura
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 2003
Page Count: 4
ISBN (Paper): 0-7803-7872-5
DOI: 10.1109/IEDM.2003.1269351
Regular:

A 600 V class AlGaN/GaN power HEMT was designed for high voltage power electronics application such as power supplies and motor drives. The fabricated device was demonstrated in a DC-DC down... View More

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