IEEE - Institute of Electrical and Electronics Engineers, Inc. - Program/erase dynamics and channel conduction in nanocrystal memories

IEEE International Electron Devices Meeting 2003

Author(s): C. Monzio Compagnoni ; D. Ielmini ; A.S. Spinelli ; A.L. Lacaita ; C. Gerardi ; L. Perniola ; B. De Salvo ; S. Lombardo
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 2003
Page Count: 4
ISBN (Paper): 0-7803-7872-5
DOI: 10.1109/IEDM.2003.1269342
Regular:

We present new models for nanocrystal (NC) memories, addressing program/erase (P/E) transients and carrier conduction in the channel controlled by discrete nodes. The model allows for the... View More

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