IEEE - Institute of Electrical and Electronics Engineers, Inc. - CVD-cobalt for the next generation of source/drain salicidation and contact silicidation in novel MOS device structures with complex shape

IEEE International Electron Devices Meeting 2003

Author(s): S.B. Kang ; H.S. Kim ; K.J. Moon ; W.H. Sohn ; G.H. Choi ; S.H. Kim ; N.J. Bae ; U.I. Chung ; J.T. Moon
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 2003
Page Count: 4
ISBN (Paper): 0-7803-7872-5
DOI: 10.1109/IEDM.2003.1269331
Regular:

A novel CVD-cobalt process which enables a uniform salicidation even in novel MOS device structures with complex shape is developed for the first time. With CVD-cobalt salicidation, identical... View More

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