IEEE - Institute of Electrical and Electronics Engineers, Inc. - Assessment of Ge n-MOSFETs by quantum simulation

IEEE International Electron Devices Meeting 2003

Author(s): A. Rahman ; A. Ghosh ; M. Lundstrom
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 2003
Page Count: 4
ISBN (Paper): 0-7803-7872-5
DOI: 10.1109/IEDM.2003.1269324
Regular:

Quantum simulations of ultra-thin-body (UTB), double-gate (DG), end of the ITRS-2001 roadmap germanium n-MOSFETs are performed using the non-equilibrium Green's function (NEGF) formalism.... View More

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