IEEE - Institute of Electrical and Electronics Engineers, Inc. - An outstanding and highly manufacturable 80nm DRAM technology

IEEE International Electron Devices Meeting 2003

Author(s): H.S. Kim ; D.H. Kim ; J.M. Park ; Y.S. Hwang ; M. Huh ; H.K. Hwang ; N.J. Kang ; B.H. Lee ; M.H. Cho ; S.E. Kim ; J.Y. Kim ; B.J. Park ; J.W. Lee ; D.I. Kim ; M.Y. Jeong ; H.J. Kim ; Y.J. Park ; Kinam Kim
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 2003
Page Count: 4
ISBN (Paper): 0-7803-7872-5
DOI: 10.1109/IEDM.2003.1269310
Regular:

For the first time, fully working 512 Mb DRAMS have been developed successfully using an 80 nm DRAM technology, which is the smallest feature size in DRAM technology ever reported. With an ArF... View More

Advertisement