IEEE - Institute of Electrical and Electronics Engineers, Inc. - Taking SOI substrates and low-k dielectrics into high-volume microprocessor production

IEEE International Electron Devices Meeting 2003

Author(s): D. Greenlaw ; G. Burbach ; T. Feudel ; F. Feustel ; K. Frohberg ; F. Graetsch ; G. Grasshoff ; C. Hartig ; T. Heller ; K. Hempel ; M. Horstmann ; P. Huebler ; R. Kirsch ; S. Kruegel ; E. Langer ; A. Pawlowitsch ; H. Ruelke ; H. Schuehrer ; R. Stephan ; A. Wei ; T. Werner ; K. Wieczorek ; M. Raab
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 2003
Page Count: 4
ISBN (Paper): 0-7803-7872-5
DOI: 10.1109/IEDM.2003.1269278
Regular:

SOI and low-k technologies are rapidly approaching production maturity. This paper highlights several challenges found when moving them from development to high-volume manufacturing. In overcoming... View More

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