IEEE - Institute of Electrical and Electronics Engineers, Inc. - Few electron memories: finding the compromise between performance, variability and manufacturability at the nano-scale

IEEE International Electron Devices Meeting 2003

Author(s): H. Silva ; M.K. Kim ; A. Kumar ; U. Avci ; S. Tiwari
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 2003
Page Count: 4
ISBN (Paper): 0-7803-7872-5
DOI: 10.1109/IEDM.2003.1269277
Regular:

The key challenges for memories that operate at the nanoscale, and are compatible with mainstream nano-scale CMOS, are in achieving the performance characteristics that are useful at massive... View More

Advertisement