IEEE - Institute of Electrical and Electronics Engineers, Inc. - 2D QM simulation and optimization of decanano non-overlapped MOS devices

IEEE International Electron Devices Meeting 2003

Author(s): R. Gusmeroli ; A.S. Spinelli ; A. Pirovano ; A.L. Lacaita ; F. Boeuf ; T. Skotnicki
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 2003
Page Count: 4
ISBN (Paper): 0-7803-7872-5
DOI: 10.1109/IEDM.2003.1269257
Regular:

Two-dimensional quantum-mechanical (2D QM) simulations of non-overlapped MOS devices are presented, validated through comparison against experimental data. It is shown that 2D QM simulations are... View More

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