IEEE - Institute of Electrical and Electronics Engineers, Inc. - Poly-Si TFT fabricated at 150/spl deg/C using ICP-CVD and excimer laser annealing for plastic substrates

IEEE International Electron Devices Meeting 2003

Author(s): Min-Cheol Lee ; Sang-Myeon Han ; Su-Hyuk Kang ; Moon-Young Shin ; Min-Koo Han
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 2003
Page Count: 4
ISBN (Paper): 0-7803-7872-5
DOI: 10.1109/IEDM.2003.1269248
Regular:

We have fabricated poly-Si TFTs employing ICP-CVD (inductively coupled plasma chemical vapor deposition) and ELA at a very low temperature of 150/spl deg/C. Poly-Si film with large grains... View More

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