IEEE - Institute of Electrical and Electronics Engineers, Inc. - SiGe:C BiCMOS technology with 3.6 ps gate delay

IEEE International Electron Devices Meeting 2003

Author(s): H. Rucker ; B. Heinemann ; R. Barth ; D. Bolze ; J. Drews ; U. Haak ; W. Hoppner ; D. Knoll ; K. Kopke ; S. Marschmeyer ; H.H. Richter ; P. Schley ; D. Schmidt ; R. Scholz ; B. Tillack ; W. Winkler ; H.-E. Wulf ; Y. Yamamoto
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 2003
Page Count: 4
ISBN (Paper): 0-7803-7872-5
DOI: 10.1109/IEDM.2003.1269180
Regular:

A high-speed SiGe:C HBT technology is presented that combines a new extrinsic base construction with a low-resistance collector design to simultaneously minimize base and collector resistances and... View More

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