IEEE - Institute of Electrical and Electronics Engineers, Inc. - Effect of Hf-N bond on properties of thermally stable amorphous HfSiON and applicability of this material to sub-50nm technology node LSIs

IEEE International Electron Devices Meeting 2003

Author(s): M. Koike ; T. Ino ; Y. Kamimuta ; M. Koyama ; Y. Kamata ; M. Suzuki ; Y. Mitani ; A. Nishiyama ; Y. Tsunashima
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 2003
Page Count: 4
ISBN (Paper): 0-7803-7872-5
DOI: 10.1109/IEDM.2003.1269177
Regular:

The electric and structural properties of hafnium silicon oxynitride (HfSiON) with high Hf/(Hf+Si) (35/spl sim/100%) were investigated, focusing on the role of Hf-N bonds inside the material. The... View More

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