IEEE - Institute of Electrical and Electronics Engineers, Inc. - Channel structure design, fabrication and carrier transport properties of strained-Si/SiGe-on-insulator (strained-SOI) MOSFETs

IEEE International Electron Devices Meeting 2003

Author(s): S. Takagi ; T. Mizuno ; T. Tezuka ; N. Sugiyama ; T. Numata ; K. Usuda ; Y. Moriyama ; S. Nakaharai ; J. Koga ; A. Tanabe ; N. Hirashita ; T. Maeda
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 2003
Page Count: 4
ISBN (Paper): 0-7803-7872-5
DOI: 10.1109/IEDM.2003.1269165
Regular:

This paper reviews the current critical issues regarding the device design of strained-Si MOSFETs and demonstrates that strained-Si-on-insulator (strained-SOI) structures can effectively... View More

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