IEEE - Institute of Electrical and Electronics Engineers, Inc. - Fabrication and mobility characteristics of ultra-thin strained Si directly on insulator (SSDOI) MOSFETs

IEEE International Electron Devices Meeting 2003

Author(s): K. Rim ; K. Chan ; L. Shi ; D. Boyd ; J. Ott ; N. Klymko ; F. Cardone ; L. Tai ; S. Koester ; M. Cobb ; D. Canaperi ; B. To ; E. Duch ; I. Babich ; R. Carruthers ; P. Saunders ; G. Walker ; Y. Zhang ; M. Steen ; M. Ieong
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 2003
Page Count: 4
ISBN (Paper): 0-7803-7872-5
DOI: 10.1109/IEDM.2003.1269163
Regular:

A tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained Si directly on insulator (SSDOI) structure. MOSFETs were fabricated, and for the first time, electron and... View More

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