IEEE - Institute of Electrical and Electronics Engineers, Inc. - Static noise margin of the full DG-CMOS SRAM cell using bulk FinFETs (Omega MOSFETs)

IEEE International Electron Devices Meeting 2003

Author(s): T. Park ; H.J. Cho ; J.D. Choe ; S.Y. Han ; S.-M. Jung ; J.H. Jeong ; B.Y. Nam ; O.I. Kwon ; J.N. Han ; H.S. Kang ; M.C. Chae ; G.S. Yeo ; S.W. Lee ; D.Y. Lee ; D. Park ; K. Kim ; E. Yoon ; J.H. Lee
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2003
Conference Location: Washington, DC, USA, USA
Conference Date: 8 December 2003
Page Count: 4
ISBN (Paper): 0-7803-7872-5
DOI: 10.1109/IEDM.2003.1269158
Regular:

The operational six-transistor SRAM cell was experimentally demonstrated using bulk FinFET CMOS technology. A cell size of 0.79 /spl mu/m/sup 2/ was achieved by 90 nm node technology, with stable... View More

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