IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ultraviolet-photon-induced paramagnetic centers in Ge and Sn co-doped silica glass

Proceedings of 2001 International Symposium on Electrical Insulating Materials (ISEIM 2001) 2001 Asia Conference on Electrical Insulation Diagnosis (ACEID 2001). 33rd Symposium on Electrical and Electronic Insulating Materials and Applications in Systems

Author(s): M. Fujimaki ; S. Tokuhiro ; T. Nakanishi ; K. Nomura ; Y. Ohki ; K. Imamura
Sponsor(s): IEEJ Tech. Committee on Dielectrics and Electr. Insulation Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2001
Conference Location: Himeji, Japan, Japan
Conference Date: 22 November 2001
Page Count: 4
Page(s): 665 - 668
ISBN (Paper): 4-88686-053-2
DOI: 10.1109/ISEIM.2001.973763
Regular:

We have examined paramagnetic centers and absorption bands in the visible-to-uv region in Ge and Sn co-doped SiO/sub 2/ glass irradiated with UV photons from a KrF excimer laser. The generation... View More

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