IEEE - Institute of Electrical and Electronics Engineers, Inc. - Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition

Proceedings of 2001 International Symposium on Electrical Insulating Materials (ISEIM 2001) 2001 Asia Conference on Electrical Insulation Diagnosis (ACEID 2001). 33rd Symposium on Electrical and Electronic Insulating Materials and Applications in Systems

Author(s): H. Sato ; H. Kato ; Y. Ohki ; Kwang Soo Seol ; T. Noma
Sponsor(s): IEEJ Tech. Committee on Dielectrics and Electr. Insulation Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2001
Conference Location: Himeji, Japan, Japan
Conference Date: 22 November 2001
Page Count: 4
Page(s): 148 - 151
ISBN (Paper): 4-88686-053-2
DOI: 10.1109/ISEIM.2001.973591
Regular:

We have investigated the conduction mechanism of a-SiO/sub x/N/sub y/:H and a-SiN/sub z/:H films by measuring the conduction current and the capacitance-voltage characteristics in MIS structure... View More

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