IEEE - Institute of Electrical and Electronics Engineers, Inc. - Photoluminescence properties of hydrogenated amorphous silicon nitride

Proceedings of 2001 International Symposium on Electrical Insulating Materials (ISEIM 2001) 2001 Asia Conference on Electrical Insulation Diagnosis (ACEID 2001). 33rd Symposium on Electrical and Electronic Insulating Materials and Applications in Systems

Author(s): N. Kashio ; H. Kato ; Y. Ohki
Sponsor(s): IEEJ Tech. Committee on Dielectrics and Electr. Insulation Soc.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2001
Conference Location: Himeji, Japan, Japan
Conference Date: 22 November 2001
Page Count: 4
Page(s): 79 - 82
ISBN (Paper): 4-88686-053-2
DOI: 10.1109/ISEIM.2001.973568
Regular:

We have investigated time-resolved PL spectra and nanosecond-order PL decay characteristics in silicon-rich a-SiN/sub x/:H film and discussed recombination processes of photogenerated carriers.... View More

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