IEEE - Institute of Electrical and Electronics Engineers, Inc. - Terahertz plasma-wave excitation in 80-nm gate-length GaAs MESFET by photomixing long-wavelength CW laser sources

Device Research Conference. Conference Digest

Author(s): T. Otsuji ; Y. Kanamaru ; H. Kitamura ; S. Nakae
Sponsor(s): Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2001
Conference Location: Notre Dame, IN, USA, USA
Conference Date: 25 June 2001
Page Count: 2
Page(s): 97 - 98
ISBN (Paper): 0-7803-7014-7
DOI: 10.1109/DRC.2001.937890
Regular:

The resonance frequency can be externally controlled which offers tunability of oscillation. The THz plasma resonant phenomena, however, has only been measured by illuminating a AlGaAs/GaAs HEMT... View More

Advertisement