IEEE - Institute of Electrical and Electronics Engineers, Inc. - Noise characteristics of highly strained InGaP/InGaAs p-HEMTs grown on patterned substrates by using compound-source MBE

Device Research Conference. Conference Digest

Author(s): Jeong Hoon Kim ; Sung-June Jo ; Jong-In Song
Sponsor(s): Electron Devices Soc
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2001
Conference Location: Notre Dame, IN, USA, USA
Conference Date: 25 June 2001
Page Count: 2
Page(s): 45 - 46
ISBN (Paper): 0-7803-7014-7
DOI: 10.1109/DRC.2001.937865
Regular:

In this paper, we report on the low-frequency and microwave noise characteristics of the highly strained InGaP/In/sub 0.33/Ga/sub 0.67/As p-HEMTs grown on patterned substrate and the conventional... View More

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