IEEE - Institute of Electrical and Electronics Engineers, Inc. - The analytic models for temperature dependence of the breakdown voltage of 6H- and 4H-SiC rectifiers

Proceedings of 3rd International Conference on Power Electronics and Motion Control

Author(s): Lee, Y.S. ; Lee, W.O. ; Han, M.K. ; Choi, Y.I.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Beijing, China
Conference Date: 15 August 2000
Volume: 3
ISBN (Paper): 7-80003-464-X
DOI: 10.1109/IPEMC.2000.882979
Regular:

In this paper, the temperature dependence of the breakdown voltage of 6H-SiC and 4H-SiC rectifiers was modeled in both nonreachthrough diode (NRD) and reachthrough diode (RD). The breakdown... View More

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