IEEE - Institute of Electrical and Electronics Engineers, Inc. - Comparison of different oxide growth processes by the thermal step method

2000 Annual Report Conference on Electrical Insulation and Dielectric Phenomena

Author(s): Odiot, F. ; Marc, I. ; Granier, O. ; Toureille, A.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Victoria, BC, Canada, Canada
Conference Date: 15 October 2000
Volume: 2
ISBN (Paper): 0-7803-6413-9
DOI: 10.1109/CEIDP.2000.884060
Regular:

Space charge density and location within oxide layer of MOS device are still an important problem since these charges play an significant role in MOS reliability. The Thermal Step Method (TSM) is... View More

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