IEEE - Institute of Electrical and Electronics Engineers, Inc. - Ultrathin (2.7 nm) oxy-nitride for suppressing boron penetration characterized by direct hole tunneling current in p+/pMOS

2000 Semiconductor Manufacturing Technology Workshop

Author(s): Chih-hsing Yu ; Ming-chen Chen ; Min-hwa Chi
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Hsinchu, Taiwan, Taiwan
Conference Date: 14 June 2000
Page(s): 99 - 106
ISBN (Paper): 0-7803-6374-4
DOI: 10.1109/SMTW.2000.883090
Regular:

One key issue in advanced CMOS technology is the boron penetration effect. In this paper, ultra-thin gate oxy-nitride (2.5 nm/spl sim/2.7 nm) is characterized by direct hole and electron tunneling... View More

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