IEEE - Institute of Electrical and Electronics Engineers, Inc. - P-i-n photodiodes in metamorphic InAlAs-InGaAs-GaAs for long wavelength applications

58th DRC. Device Research Conference

Author(s): Jang, J.-H. ; Cueva, G. ; Dumka, D.C. ; Hoke, W.E. ; Lemonias, P.J. ; Adesida, I.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Denver, CO, USA, USA
Conference Date: 19 June 2000
Page(s): 173 - 174
ISBN (Paper): 0-7803-6472-4
DOI: 10.1109/DRC.2000.877136
Regular:

InP-based heterostructures have traditionally been used for the fabrication of photodetectors and integrated optoelectronic circuits (OEICs) operating at long wavelength (1.55 /spl mu/m) for... View More

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