IEEE - Institute of Electrical and Electronics Engineers, Inc. - Dark current reduction and operational wavelength shift in normal incidence InAs-GaAs QDIPs through the introduction of AlGaAs layers in the active region of the detector

58th DRC. Device Research Conference

Author(s): Baklenov, O. ; Chen, Z.H. ; Kim, E.T. ; Mukhametzhanov, I. ; Madhukar, A. ; Ma, F. ; Ye, Z. ; Yang, B. ; Campbell, J.
Publisher: IEEE - Institute of Electrical and Electronics Engineers, Inc.
Publication Date: 1 January 2000
Conference Location: Denver, CO, USA, USA
Conference Date: 19 June 2000
Page(s): 171 - 172
ISBN (Paper): 0-7803-6472-4
DOI: 10.1109/DRC.2000.877135
Regular:

Self-assembled quantum dots (SAQDs) are an attractive alternative to quantum wells (QWs) for near to long-wavelength infrared photodetector applications. Due to the 3D carrier confinement and lack... View More

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